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Modern DRAM chips (DDR4 and LPDDR4 after 2015) are affected by a vulnerability in deployment of internal mitigations against RowHammer attacks known as Target Row Refresh (TRR), aka the TRRespass issue. To exploit this vulnerability, the attacker needs to create certain access patterns to trigger bit flips on affected memory modules, aka a Many-sided RowHammer attack. This means that, even when chips advertised as RowHammer-free are used, attackers may still be able to conduct privilege-escalation attacks against the kernel, conduct privilege-escalation attacks against the Sudo binary, and achieve cross-tenant virtual-machine access by corrupting RSA keys. The issue affects chips produced by SK Hynix, Micron, and Samsung. NOTE: tracking DRAM supply-chain issues is not straightforward because a single product model from a single vendor may use DRAM chips from different manufacturers.

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Modern DRAM 输入验证错误漏洞

Modern DRAM是一款芯片。 Modern DRAM芯片中内部缓解措施（为防止RowHammer攻击）的部署存在输入验证错误漏洞。攻击者可利用该漏洞提升权限。以下产品及版本受到影响：SK Hynix DDR4 SDRAM；SK Hynix LPDDR4；Micron DDR4 SDRAM；Micron LPDDR4；Samsung DDR4 SDRAM；Samsung LPDDR4。

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