Vulnerability Information
Although we use advanced large model technology, its output may still contain inaccurate or outdated information.Shenlong tries to ensure data accuracy, but please verify and judge based on the actual situation.
Vulnerability Title
Scalable Rowhammering In the Frequency Domain to Bypass TRR Mitigations On Modern DDR4/LPDDR4X Devices
Vulnerability Description
Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.
CVSS Information
CVSS:3.1/AV:N/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H
Vulnerability Type
输入验证不恰当
Vulnerability Title
Ddr4 Dram 安全漏洞
Vulnerability Description
Ddr4 Dram是一种同步动态随机存取存储器。 DDR4 DRAM 中存在安全漏洞，该漏洞源于产品中允许无特权的系统用户使用Rowhammer攻击变体来引发跨内存空间的位损坏。攻击者可通过该漏洞导致拒绝服务或特权升级。
CVSS Information
N/A
Vulnerability Type
N/A